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1

A Pt/AlGaN/GaN heterostructure field-effect transistor (HFET) prepared by an electrophoretic deposition (EPD)-gate approach

Hung, Ching-Wen, Chang, Ching-Hong, Chen, Wei-Cheng, Chen, Chun-Chia, Chen, Huey-Ing, Tsai, Yu-Ting, Tsai, Jung-Hui, Liu, Wen-Chau

Journal:

Solid-State Electronics

Année:

2016

Langue:

english

Fichier:

PDF, 1.15 MB

english, 2016

2

Functional AlGaAs/GaAs heterostructure-emitter bipolar transistor with a pseudomorphic InGaAs/GaAs quantum-well base

Journal:

Microelectronics Reliability

Année:

1999

Langue:

english

Fichier:

PDF, 172 KB

english, 1999

3

High-performance InGaP/GaAs superlattice–emitter bipolar transistor with multiple S-shaped negative-differential-resistance switches under inverted operation mode

Jung-Hui Tsai, Chia-Hong Huang, Wen-Shiung Lour, Yi-Ting Chao, Jhih-Jhong Ou-Yang, Jia-Cing Jhou

Journal:

Thin Solid Films

Année:

2012

Langue:

english

Fichier:

PDF, 467 KB

english, 2012

4

An InP/InGaAs metamorphic δ-doped heterojunction bipolar transistor with high current gain and low offset voltage

Jung-Hui Tsai, Wen-Shiung Lour, Yi-Ting Chao, Sheng-Shiun Ye, Yung-Chun Ma, Jia-Cing Jhou, You-Ren Wu, Jhih-Jhong Ou-Yang

Journal:

Thin Solid Films

Année:

2012

Langue:

english

Fichier:

PDF, 266 KB

english, 2012

5

Improvement mechanism of resistance random access memory with supercritical CO2 fluid treatment

Chang, Kuan-Chang, Chen, Jung-Hui, Tsai, Tsung-Ming, Chang, Ting-Chang, Huang, Syuan-Yong, Zhang, Rui, Chen, Kai-Huang, Syu, Yong-En, Chang, Geng-Wei, Chu, Tian-Jian, Liu, Guan-Ru, Su, Yu-Ting, Chen,

Journal:

The Journal of Supercritical Fluids

Année:

2014

Langue:

english

Fichier:

PDF, 2.74 MB

english, 2014

6

Performance and direct-coupled FET logic applications of InAlAs/InGaAs co-integrated field-effect transistors by 2-D simulation

Tsai, Jung-Hui, Huang, Chia-Hong, Ou-Yang, Jhih-Jhong, Chao, Yi-Ting, Jhou, Jia-Cing, Wu, You-Ren

Journal:

Thin Solid Films

Année:

2013

Langue:

english

Fichier:

PDF, 914 KB

english, 2013

7

Promoted Potential of Heterojunction Phototransistor for Low-Power Photodetection by Surface Sulfur Treatment

Chen, Wei-Tien, Chen, Hon-Rung, Chiu, Shao-Yen, Hsu, Meng-Kai, Tsai, Jung-Hui, Lour, Wen-Shiung

Journal:

Journal of The Electrochemical Society

Année:

2007

Langue:

english

Fichier:

PDF, 145 KB

english, 2007

8

An extremely low offset voltage AlInAs/GaInAs heterostructure-emitter bipolar transistor

Jung-Hui Tsai, Shiou-Ying Cheng, Lih-Wen Laih, Wen-Chau Liu, Hao-Hsiung Lin

Journal:

Superlattices and Microstructures

Année:

1998

Langue:

english

Fichier:

PDF, 166 KB

english, 1998

9

Study of the multiple-negative-differential-resistance (MNDR) switching behaviors based on heterojunction bipolar transistor (HBT) structures

Wei-Chou Wang, Hsi-Jen Pan, Kuo-Hui Yu, Kun-Wei Lin, Jung-Hui Tsai, Shiou-Ying Cheng, Wen-Chau Liu

Journal:

Superlattices and Microstructures

Année:

2001

Langue:

english

Fichier:

PDF, 480 KB

english, 2001

10

Investigation of an InGaAsGaAs doped-channel MIS-like pseudomorphic transistor

Lih-Wen Laih, Jung-Hui Tsai, Wen-Chau Liu, Wei-Chou Hsu, Wen-Shiung Lour

Journal:

Solid-State Electronics

Année:

1995

Langue:

english

Fichier:

PDF, 611 KB

english, 1995

11

Characteristics of metal-insulated-semiconductor (MIS) like In0.2Ga0.8AsGaAs doped-channel structure

Lih-Wen Laih, Wen-Shiung Lour, Jung-Hui Tsai, Wen-Chau Liu, Cheng-Zu Wu, Kong-Beng Thei, Rong-Chau Liu

Journal:

Solid-State Electronics

Année:

1996

Langue:

english

Fichier:

PDF, 411 KB

english, 1996

12

Characteristics of camel-gate structures with active doping channel profiles

Jung-Hui Tsai, Wen-Shiung Lour, Lih-Wen Laih, Rong-Chau Liu, Wen-Chau Liu

Journal:

Solid-State Electronics

Année:

1996

Langue:

english

Fichier:

PDF, 478 KB

english, 1996

13

Characteristics of functional heterostructure-emitter bipolar transistors (HEBTs)

Kong-Beng Thei, Jung-Hui Tsai, Wen-Chau Liu, Wen-Shiung Lour

Journal:

Solid-State Electronics

Année:

1996

Langue:

english

Fichier:

PDF, 454 KB

english, 1996

14

Comprehensive investigation on planar type of Pd–GaN hydrogen sensors

Shao-Yen Chiu, Hsuan-Wei Huang, Tze-Hsuan Huang, Kun-Chieh Liang, Kang-Ping Liu, Jung-Hui Tsai, Wen-Shiung Lour

Journal:

International Journal of Hydrogen Energy

Année:

2009

Langue:

english

Fichier:

PDF, 1.03 MB

english, 2009

15

Simulated analysis for InGaP/GaAs heterostructure-emitter bipolar transistor with InGaAs/GaAs superlattice-base structure

Jung-Hui Tsai, I-Hsuan Hsu, Tzu-Yen Weng, Chien-Ming Li

Journal:

Microelectronics Journal

Année:

2007

Langue:

english

Fichier:

PDF, 150 KB

english, 2007

16

Comprehensive study of Pd/GaN metal–semiconductor–metal hydrogen sensors with symmetrically bi-directional sensing performance

Shao-Yen Chiu, Hsuan-Wei Huang, Tze-Hsuan Huang, Kun-Chieh Liang, Kang-Ping Liu, Jung-Hui Tsai, Wen-Shiung Lour

Journal:

Sensors and Actuators B: Chemical

Année:

2009

Langue:

english

Fichier:

PDF, 756 KB

english, 2009

17

Multiple negative-differential-resistance switches based on an InGaP/GaAs/InGaAs step-compositional-emitter bipolar transistor for multiple-valued logic application

Jung-Hui Tsai, King-Poul Zhu, Ying-Cheng Chu, Shao-Yen Chiu

Journal:

Solid-State Electronics

Année:

2005

Langue:

english

Fichier:

PDF, 305 KB

english, 2005

18

Investigation of InP/InGaAs pnp δ-doped heterojunction bipolar transistor with extremely low offset voltage

Jung-Hui Tsai, Yu-Chi Kang, I-Hsuan Hsu, Tzu-Yen Weng

Journal:

Solid-State Electronics

Année:

2006

Langue:

english

Fichier:

PDF, 168 KB

english, 2006

19

Model and analysis of a delta-doping field-effect transistors utilizing an InGaP/GaAs camel-gate structure

Journal:

Solid-State Electronics

Année:

2001

Langue:

english

Fichier:

PDF, 139 KB

english, 2001

20

Characteristics of InGaP/GaAs co-integrated δ-doped heterojunction bipolar transistor and doped-channel field effect transistor

Journal:

Solid-State Electronics

Année:

2002

Langue:

english

Fichier:

PDF, 127 KB

english, 2002

21

Investigation of InP/InGaAs superlattice-emitter resonant tunneling bipolar transistor at room temperature

Jung-Hui Tsai, King-Poul Zhu

Journal:

Solid-State Electronics

Année:

2003

Langue:

english

Fichier:

PDF, 135 KB

english, 2003

22

High-performance AlInAs/GaInAs δ-doped HEMT with negative differential resistance switch for logic application

Journal:

Solid-State Electronics

Année:

2004

Langue:

english

Fichier:

PDF, 310 KB

english, 2004

23

On the recombination currents effect of heterostructure-emitter bipolar transistors (HEBTs)

Jung-Hui Tsai, Lih-Wen Laih, Hui-Jung Shih, Wen-Chau Liu, Hao-Hsiung Lin

Journal:

Solid-State Electronics

Année:

1996

Langue:

english

Fichier:

PDF, 545 KB

english, 1996

24

Investigation of an InGaP/GaAs resonant-tunneling transistor (RTT)

Shiou-Ying Cheng, Jung-Hui Tsai, Wen-Lung Chang, Hsi-Jen Pan, Yung-Hsin Shie, Wen-Chau Liu

Journal:

Solid-State Electronics

Année:

1999

Langue:

english

Fichier:

PDF, 273 KB

english, 1999

25

A new wide voltage operation regime double heterojunction bipolar transistor

Shiou-Ying Cheng, Hsi-Jen Pan, Shun-Ching Feng, Kuo-Hui Yu, Jung-Hui Tsai, Wen-Chau Liu

Journal:

Solid-State Electronics

Année:

2000

Langue:

english

Fichier:

PDF, 228 KB

english, 2000

26

A novel resonant tunneling base transistor with bi-directional negative-differential-resistance phenomena

Journal:

Solid-State Electronics

Année:

2000

Langue:

english

Fichier:

PDF, 162 KB

english, 2000

27

Regenerative switching phenomenon of a graded AlxGa1−xAs/InGaAs/GaAs heterostructure

Jung-Hui Tsai, Hui-Jung Shih, Shiou-Ying Cheng, Wen-Chau Liu

Journal:

Thin Solid Films

Année:

1997

Langue:

english

Fichier:

PDF, 241 KB

english, 1997

28

Hydrogen sensors with double dipole layers using a Pd-mixture-Pd triple-layer sensing structure

Shao-Yen Chiu, Jung-Hui Tsai, Hsuan-Wei Huang, Kun-Chieh Liang, Tze-Hsuan Huang, Kang-Ping Liu, Tzung-Min Tsai, Kuo-Yen Hsu, Wen-Shiung Lour

Journal:

Sensors and Actuators B: Chemical

Année:

2009

Langue:

english

Fichier:

PDF, 882 KB

english, 2009

29

The influence of a -doped sheet on DC performances of InP/InGaAs heterojunction bipolar transistors

Jung-Hui Tsai, Yu-Jui Chu, Jeng-Shyan Chen, King-Poul Zhu

Journal:

Superlattices and Microstructures

Année:

2005

Langue:

english

Fichier:

PDF, 231 KB

english, 2005

30

Design consideration of -doping channels for high-performance n+ - GaAs / p+ -InGaP/n-GaAs camel-gate field effect transistors

Jung-Hui Tsai, Jeng-Shyan Chen, Yu-Jui Chu

Journal:

Superlattices and Microstructures

Année:

2005

Langue:

english

Fichier:

PDF, 290 KB

english, 2005

31

Investigation of InGaP/InGaAs n- and p-channel pseudomorphic modulation-doped field effect transistors with high gate turn-on voltages

Jung-Hui Tsai, Tzu-Yen Weng, King-Poul Zhu

Journal:

Superlattices and Microstructures

Année:

2008

Langue:

english

Fichier:

PDF, 657 KB

english, 2008

32

Microwave complementary doped-channel field-effect transistors

Jung-Hui Tsai, Shao-Yen Chiu, Wen-Shiung Lour, Wen-Chau Liu, Chien-Ming Li, Ning-Xing Su, Yi-Zhen Wu, Yin-Shan Huang

Journal:

Superlattices and Microstructures

Année:

2009

Langue:

english

Fichier:

PDF, 605 KB

english, 2009

33

Characteristics of InGaP/InGaAs complementary pseudomorphic doped-channel HFETs

Jung-Hui Tsai, Chien-Ming Li

Journal:

Solid-State Electronics

Année:

2008

Langue:

english

Fichier:

PDF, 146 KB

english, 2008

34

Comparison of heterostructure-emitter bipolar transistors (HEBTs) with InGaAs/GaAs superlattice and quantum-well base structures

Jung-Hui Tsai, I-Hsuan Hsu, Chien-Ming Li, Ning-Xing Su, Yi-Zhen Wu, Yin-Shan Huang

Journal:

Solid-State Electronics

Année:

2008

Langue:

english

Fichier:

PDF, 222 KB

english, 2008

35

On the breakdown behaviors of InP/InGaAs based heterojunction bipolar transistors (HBTs)

Tzu-Pin Chen, Chi-Jhung Lee, Wen-Shiung Lour, Der-Feng Guo, Jung-Hui Tsai, Wen-Chau Liu

Journal:

Solid-State Electronics

Année:

2009

Langue:

english

Fichier:

PDF, 344 KB

english, 2009

36

Investigation of InGaP/GaAs/InGaAs camel-like gate delta-doped p-channel field-effect transistor

Jung-Hui Tsai, Wen-Shiung Lour, Chia-Hong Huang, Ning-Feng Dale, Yuan-Hong Lee, Jhih-Syuan Sheng, Wen-Chau Liu

Journal:

Solid-State Electronics

Année:

2010

Langue:

english

Fichier:

PDF, 383 KB

english, 2010

37

InGaAsGaAs pseudomorphic heterostructure transistors prepared by MOVPE

Wen-Chau Liu, Lih-Wen Laih, Jung-Hui Tsai, Kun-Wei Lin, Chin-Chuan Cheng

Journal:

Journal of Crystal Growth

Année:

1997

Langue:

english

Fichier:

PDF, 223 KB

english, 1997

38

Investigation of GaAs-based heterostructure–emitter bipolar transistors (HEBTs)

Wen-Chau Liu, Jung-Hui Tsai, Shiou-Ying Cheng, Wen-Lung Chang, Hsi-Jen Pan, Yung-Hsin Shie

Journal:

Thin Solid Films

Année:

1998

Langue:

english

Fichier:

PDF, 291 KB

english, 1998

39

High-performance InGaP/GaAspnpδ-doped heterojunction bipolar transistor

Jung-Hui Tsai, Shao-Yen Chiu, Wen-Shiung Lour, Der-Feng Guo

Journal:

Année:

2009

Langue:

english

Fichier:

PDF, 194 KB

english, 2009

40

InGaP/InGaAs doped-channel direct-coupled field-effect transistors logic with low supply voltage

Jung-Hui Tsai, Wen-Shiung Lour, Tzu-Yen Weng, Chien-Ming Li

Journal:

Année:

2010

Langue:

english

Fichier:

PDF, 158 KB

english, 2010

41

InP/GaAsSb type-II DHBTs with GaAsSb/lnGaAs superlattice-base and GaAsSb bulk-base structures

Jung-Hui Tsai, Wen-Shiung Lour, Der-Feng Guo, Wen-Chau Liu, Yi-Zhen Wu, Ying-Feng Dai

Journal:

Année:

2010

Langue:

english

Fichier:

PDF, 195 KB

english, 2010

42

A new InGaP/GaAs tunneling heterostructure-emitter bipolar transistor (T-HEBT)

Jung-Hui Tsai, Ching-Sung Lee, Wen-Shiung Lour, Yung-Chun Ma, Sheng-Shiun Ye

Journal:

Année:

2011

Langue:

english

Fichier:

PDF, 166 KB

english, 2011

43

Comparative investigation of InGaP/GaAs pseudomorphic field-effect transistors with triple doped-channel profiles

Jung-Hui Tsai, Der-Feng Guo, Wen-Shiung Lour

Journal:

Année:

2011

Langue:

english

Fichier:

PDF, 163 KB

english, 2011

44

Hydrogen-sensitive sensor with stabilized Pd-mixture forming sensing nanoparticles on an interlayer

Shih-Wei Tan, Jung-Hui Tsai, Shih-Wen Lai, Chieh Lo, Wen-Shiung Lour

Journal:

International Journal of Hydrogen Energy

Année:

2011

Langue:

english

Fichier:

PDF, 1.58 MB

english, 2011

45

Promotion of a copper–zinc catalyst with rare earth for the steam reforming of methanol at low temperatures

Ming-Chung Tsai, Jung-Hui Wang, Chia-Chieh Shen, Chuin-Tih Yeh

Journal:

Journal of Catalysis

Année:

2011

Langue:

english

Fichier:

PDF, 604 KB

english, 2011

46

A functional InGaP/GaAs double heterostructure-emitter bipolar transistor with multiple negative-differential-resistance switches

Jung-Hui Tsai, King-Poul Zhu, Ying-Cheng Chu, Shao-Yen Chiu

Journal:

Materials Chemistry and Physics

Année:

2004

Langue:

english

Fichier:

PDF, 111 KB

english, 2004

47

Influence of spacer layer on InP/InGaAs δ-doped heterojunction bipolar transistors

Jung-Hui Tsai, Yu-Jui Chu

Journal:

Materials Chemistry and Physics

Année:

2005

Langue:

english

Fichier:

PDF, 338 KB

english, 2005

48

Investigation of InP/InGaAs superlattice-emitter bipolar transistor with multiple negative-differential-resistance regions

Jung-Hui Tsai, Yu-Chi Kang, I-Hsuan Hsu, Tzu-Yen Weng

Journal:

Materials Chemistry and Physics

Année:

2006

Langue:

english

Fichier:

PDF, 372 KB

english, 2006

49

Influence of gate thermal oxide layer on InGaP/InGaAs doping-channel field-effect transistors

Journal:

Materials Chemistry and Physics

Année:

2012

Langue:

english

Fichier:

PDF, 513 KB

english, 2012

50

InGaP/GaAs camel-gate field effect transistor with double δ-doping channel profiles

Journal:

Materials Chemistry and Physics

Année:

2002

Langue:

english

Fichier:

PDF, 80 KB

english, 2002